Computational Nanoelectronics (CoNE)
- Advanced simulations and analysis of emerging unconventional nano-MOSFET structure based on silicon material.
- Design, modelling and simulations of strained silicon based devices for conventional and emerging nano-MOSFET structure.
- Compact physics-based modelling of nano-MOSFET such as ballistic transport, nanowire, carbon nanotube, graphene, nanoscroll, nanobelt, superlattice strained, double-gate and surrounding-gate nanoscale transistor.
- Development of silicon and carbon based materials particularly Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), Carbon Nanotube Field-Effect Transistor (CNTFET) and Graphene Nanoribbon Field-Effect Transistor (GNRFET) device.
- Circuit level modeling based on silicon and carbon based material for standard electronic computer-aided design (ECAD) tools to enable digital logic circuit design. MATLAB, Synopsys HSPICE and Orcad PSPICE are used to simulate the robust and comprehensive device, circuit and layout-based models.
- Analog CMOS circuit design, biomolecular sensing, DNA chip.
- The development of deep submicron Single Photon Avalanche Diode (SPAD) as an imaging sensor.
- Graphene based sensors.
- Zinc Oxide nanowire and thin film fabrication for sensor devices.
- Nanocrystalline graphite device for sensor applications.